technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn power silicon transistor qualified per mil-prf-19500/544 t4-lds-0039 rev. 1 (080797) page 1 of 2 devices levels 2n5152 2n5154 jan 2n5152l 2n5154l jantx 2n5152u3 2n5154u3 jantxv jans absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditio ns symbol value unit collector-emitter voltage v ceo 80 vdc collector-base voltage v cbo 100 vdc emitter-base voltage v ebo 5.5 vdc collector current i c 2.0 adc total power dissipation (1) @ t a = +25c @ t c = +25c p t 1.0 10 w operating & storage junction temperature range t j , t stg -65 to +200 c thermal resistance, junction-to case (1) r jc 10 1.7 (u3) c/w note: 1) see 19500/544 for thermal derating curves. 2) this value applies for p w 8.3ms, duty cycle 1%. electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics collector-emitter breakdown voltage i c = 100madc, i b = 0 v (br)ceo 80 vdc emitter-base cutoff current v eb = 4.0vdc, i c = 0 v eb = 5.5vdc, i c = 0 i ebo 1.0 1.0 adc madc collector-emitter cutoff current v ce = 60vdc, v be = 0 v ce = 100vdc, v be = 0 i ces 1.0 1.0 adc madc collector-emitter cutoff current v ce = 40vdc, i b = 0 i ceo 50 adc on charactertics forward-current transfer ratio i c = 50madc, v ce = 5vdc i c = 2.5adc, v ce = 5vdc 2n5152 2n5154 2n5152 2n5154 h fe 20 50 30 70 --- --- 90 200 to-5 2n5152l, 2n5154l to-39 (to-205ad) 2n5152, 2n5154 u-3 2n5152u3, 2n5154u3
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn power silicon transistor qualified per mil-prf-19500/544 t4-lds-0039 rev. 1 (080797) page 2 of 2 electrical characteristics (con?t) parameters / test conditions symbol min. max. unit i c = 5adc, v ce = 5vdc 2n5152 2n5154 h fe 20 40 collector-emitter saturation voltage i c = 2.5adc, i b = 250madc i c = 5.0adc, i b = 500madc v ce(sat) 0.75 1.5 vdc base-emitter voltage non-saturation i c = 2.5adc, v ce = 5vdc v be 1.45 vdc base-emitter saturation voltage i c = 2.5adc, i b = 250madc i c = 5.0adc, i b = 500madc v be(sat) 1.45 2.2 vdc dynamic characteristics parameters / test conditions symbol min. max. unit magnitude of common emitter small-signal short-circuit forward current transfer ratio i c = 500madc, v ce = 5vdc, f = 10mhz 2n5152 2n5154 |h fe | 6 7 small-signal short circuit forward-current transfer ratio i c = 100madc, v ce = 5vdc, f = 1khz 2n5152 2n5154 h fe 20 50 output capacitance v cb = 10vdc, i e = 0, f = 1.0mhz c obo 250 pf switching characteristics parameters / test conditions symbol min. max. unit turn-on time i c = 5adc, i b1 = 500madc t on 0.5 s turn-off time r l = 6 t off 1.5 s storage time i b2 = -500madc t s 1.4 s fall time v be(off) = 3.7vdc t f 0.5 s safe operating area dc tests t c = +25c, 1 cycle, t p = 1.0s test 1 v ce = 5.0vdc, i c = 2.0adc test 2 v ce = 32vdc, i c = 310madc test 3 v ce = 80vdc, i c = 12.5madc
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